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High frequency CNTFET-based logic gate

Farhana, Soheli and Alam, A. H. M. Zahirul and Khan, Sheroz (2015) High frequency CNTFET-based logic gate. In: 10th IEEE 2015 Regional Symposium on Micro and Nanoelectronics (RSM 2015), 19-21 August 2015, Kuala Terengganu.

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Modeling of high frequency carbon nanotube field effect transistor (CNTFET) is analyzed in this paper to develop logic gate. The aim of this research is to minimize the dimension of the logic gate for the future electronic device application. The analytical models of CNTFETs are employed to model the logic gates and verify their transfer characteristics. The logic gates discussed in this paper are inverters, NOR gate and NAND gate. The high frequency response is achieved from the proposed logic gates operation analyzed from the small signal model. Finally the results show the electronic properties of carbon nanotubes (CNTs) affect the variations for the logic gate’s transfer characteristics.

Item Type: Conference or Workshop Item (UNSPECIFIED)
Additional Information: 4575/44632 (ISBN: 978-1-4799-8550-0)
Uncontrolled Keywords: —carbon nanotube; field-effect transistor; logic gate; chiral vector; high frequency
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Kulliyyahs/Centres/Divisions/Institutes (Can select more than one option. Press CONTROL button): Kulliyyah of Engineering > Department of Electrical and Computer Engineering
Depositing User: Prof. Dr. AHM Zahirul Alam
Date Deposited: 16 Nov 2015 14:22
Last Modified: 23 May 2016 10:46
URI: http://irep.iium.edu.my/id/eprint/44632

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