DIBL and subthreshold swing effect on carbon nanotube field effect transistor

Farhana, Soheli and Alam, A. H. M. Zahirul and Khan, Sheroz (2015) DIBL and subthreshold swing effect on carbon nanotube field effect transistor. In: World Congress on Engineering (WCE 2015), 1st-3rd July 2015, London, UK.

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Abstract

Silicon based devices are getting problem with the limitation of channel length for fabrication of the miniature size. Short channel effects are creating such problem of the silicon devices. Thus CNT is a smart choice for replacement with the silicon. A brief analysis of the effect of short channel carbon nanotube field effect transistor (CNTFET) is elucidated in this paper. The analysis of the CNTFET model shows the Drain Induced Barrier lowering (DIBL) and sub-threshold Swing (S) of CNTFET with the channel of 14nm. The analysis of SS and DIBL shows the best electronics performance of CNT. High-k transistor can be fit for this material such as Hfo2 performs low subthreshold swing because of get large gate capacitance. This analysis is necessary for the design of a lower scaling channel of CNTFET.

Item Type:	Conference or Workshop Item (Plenary Papers)
Additional Information:	4575/44492
Uncontrolled Keywords:	Carbon nanotube, DIBL, subthreshold swing, transistor
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering
Kulliyyahs/Centres/Divisions/Institutes (Can select more than one option. Press CONTROL button):	Kulliyyah of Engineering > Department of Electrical and Computer Engineering
Depositing User:	Prof. Dr. AHM Zahirul Alam
Date Deposited:	07 Sep 2015 09:32
Last Modified:	06 Mar 2018 12:05
URI:	http://irep.iium.edu.my/id/eprint/44492

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