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Electronic state transition in cooperatively interacting point-defects in semiconductor crystals

Mohamed, Mohd Ambri and Majlis, Yeop Burhanuddin and Ani, Mohd Hanafi (2014) Electronic state transition in cooperatively interacting point-defects in semiconductor crystals. In: 11th IEEE International Conference on Semiconductor Electronics, ICSE 2014, 27 - 29 August 2014, Berjaya Times Square Hotel Kuala Lumpur; Malaysia.

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Electron state transition of deep level point defects in a semiconductor crystal was studied. Low-temperature grown GaAs produced excess antisite As (AsGa) which produces localized spin when doped with Be. A nearly abrupt decrease of 1.7% of the resistance is detected at a temperature around 4 K which is consistent with abrupt decrease of magnetization. These observations are explained as a result of cooperative transition of electron states of AsGa defects. First-principal calculations of the electron state of an AsGa atom with a shallow acceptor Be show that at the transition an AsGa+ ion is displaced to the interstitial site and becomes a neutral atom and finally results in formation of a hole producing enhancement in conductivity.

Item Type: Conference or Workshop Item (UNSPECIFIED)
Additional Information: 4583/40449 (ISBN: 978-1-4799-5760-6, DOI: 10.1109/SMELEC.2014.6920844)
Uncontrolled Keywords: LT-GaAs; antisite As; Molecular Beam Epitaxy
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering > TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices
Kulliyyahs/Centres/Divisions/Institutes (Can select more than one option. Press CONTROL button): Kulliyyah of Engineering > Department of Manufacturing and Materials Engineering
Depositing User: Dr Mohd Hanafi Ani
Date Deposited: 06 Jan 2015 09:38
Last Modified: 25 Aug 2017 09:05
URI: http://irep.iium.edu.my/id/eprint/40449

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