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Piezoelectric thin films for double electrode CMOS MEMS surface acoustic wave (SAW) resonator

Md Ralib @ Md Raghib, Aliza 'Aini and Nordin, Anis Nurashikin and Alam, A. H. M. Zahirul and Hashim, Uda and Othman, Raihan (2015) Piezoelectric thin films for double electrode CMOS MEMS surface acoustic wave (SAW) resonator. Microsystems Technologies, 21. pp. 1931-1940. ISSN 0946-7076 (Print), 1432-1858 (Online) (In Press)

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CMOS integration for RF-MEMS is desired to yield compact, low-power and portable devices. In this work, we illustrate the usage of double electrode CMOS SAW resonators using both ZnO and AlN as its piezoelectric material. Double electrode transducers were chosen, as they are better at suppressing undesired acoustic reflections compared to single electrodes. The structure and dimension of the device is based on 0.35 μm CMOS process where the IDTs are fabricated using standard CMOS fabrication process. 2D Finite element modeling of the CMOS SAW resonator using COMSOL Multiphysics® is presented. Two-step eigenfrequency and frequency domain analyses were performed. The acoustic velocities generated are 3,925 and 5,953 m/s for ZnO and AlN CMOS SAW resonator respectively. Higher acoustic displacement and surface potential were observed in ZnO compared to AlN. It can be concluded that ZnO thin films have higher electromechanical coupling coefficients and are more efficient than AlN thin films.

Item Type: Article (Journal)
Additional Information: 4575/38246
Uncontrolled Keywords: Piezoelectric thin films
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering > TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices
Kulliyyahs/Centres/Divisions/Institutes (Can select more than one option. Press CONTROL button): Kulliyyah of Engineering > Department of Electrical and Computer Engineering
Depositing User: Dr. Anis Nurashikin Nordin
Date Deposited: 19 Nov 2014 12:07
Last Modified: 15 Apr 2016 17:35
URI: http://irep.iium.edu.my/id/eprint/39246

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