Spice model design for carbon nanotube field effect transistor (CNTFET)

Farhana, Soheli and Alam, A. H. M. Zahirul and Khan, Sheroz (2014) Spice model design for carbon nanotube field effect transistor (CNTFET). In: 2014 IEEE International Conference on Semiconductor Electronics (ICSE), 27-29 Aug. 2014 , Kuala Lumpur.

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Abstract

In this paper, the design of SPICE circuit model has been discussed for Carbon Nanotube Field Effect Transistor (CNTFET) and predict device high frequency performance. An enhancement mode SPICE circuit model for nanotube transistor has been developed. A new CNTFET circuit can be developed by using this SPICE model. It can be also used to examine the performance benefits of the newly built transistor. The carbon nanotube field effect transistor SPICE model has been analyzed on the high frequency properties including the persuade of ballistic transport, kinetic inductance and quantum capacitance. The model enables device design and performance optimization for the future generation nano-electronics device modeling.

Item Type:	Conference or Workshop Item (UNSPECIFIED)
Additional Information:	4575/39067
Uncontrolled Keywords:	carbon nanotube; transistor; quantum capacitance; spice model
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering
Kulliyyahs/Centres/Divisions/Institutes (Can select more than one option. Press CONTROL button):	Kulliyyah of Engineering > Department of Electrical and Computer Engineering
Depositing User:	Prof. Dr. AHM Zahirul Alam
Date Deposited:	12 Nov 2014 15:17
Last Modified:	18 Jan 2021 13:35
URI:	http://irep.iium.edu.my/id/eprint/39067

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