Trench DMOS interface trap characterization by three-terminal charge pumping measurement

Izzudin , Ismah and Kamaruddin , Mohd. Hanif and Nordin, Anis Nurashikin and Soin, Norhayati (2012) Trench DMOS interface trap characterization by three-terminal charge pumping measurement. Microelectronics Reliability, 52 (12). pp. 2914-2919.

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Abstract

The applicability of three-terminal charge pumping (3T-CP) technique to characterize the gate-oxide/Silicon (SiO2/Si) interface in a 45 nm thick SiO2, n-type trench Double-diffused Metal–Oxide–Semiconductor (DMOS) technology transistors is studied. The charge pumping current for process control monitor kerf (PCM-Kerf) structures were successfully measured during experiments. The plot shapes and trends are in agreement with previously reported work. A correlation study was performed with the numerical value of charge pumping current and experimental results on PCM-Kerf for a planar DMOS with 4 terminals. The charge pumping measurements showed very high source–drain current after approximately −2 V Vbase value.

Item Type:	Article (Journal)
Additional Information:	3239/27128
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering > TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices > TK7885 Computer engineering
Kulliyyahs/Centres/Divisions/Institutes (Can select more than one option. Press CONTROL button):	Kulliyyah of Engineering > Department of Electrical and Computer Engineering
Depositing User:	Dr. Anis Nurashikin Nordin
Date Deposited:	29 Nov 2012 08:00
Last Modified:	29 Nov 2012 08:00
URI:	http://irep.iium.edu.my/id/eprint/27128

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