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Surface roughness of sputtered silicon. II. Model verification

Ali, Mohammad Yeakub and Hung, NguyenPhu (2001) Surface roughness of sputtered silicon. II. Model verification. Materials and Manufacturing Processes, 16 (3). pp. 315-329. ISSN 1042-6914

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Experimental verification of the mathematical surface roughness model for sputtered silicon was performed. The beam shape and its significant level of intensity were determined first by measuring the topography of craters sputtered by focused ion beam (FIB). Then the beam function was generated for various combinations of beam parameters. The material function was developed both by theoretical and experimental analysis. These two functions were then used in the model to calculate the theoretical surface roughness. Microsurface analysis was formed by FIB sputtering of a (100) silicon wafer. The surface roughness at the bottom of the sputtered features was then measured using an atomic force microscope. The theoretical surface roughness was found to be within ±1 and ±5 nm of the measured surface roughness with the measurement uncertainty (standard deviation) of about ±0.36 and ±0.85 nm for R a and R t, respectively.

Item Type: Article (Journal)
Additional Information: 4751/27112
Uncontrolled Keywords: Beam profile; Dry etching; Dwell time; Focused ion beam; Intensity profile; Microfabrication; Micromachining; Micromilling; Micromolding; Microtools; Mod eling; Silicon; Sputtering; Surface finish; Surface roughness
Subjects: T Technology > TS Manufactures
Kulliyyahs/Centres/Divisions/Institutes (Can select more than one option. Press CONTROL button): Kulliyyah of Engineering > Department of Manufacturing and Materials Engineering
Depositing User: Prof. Ir. Dr. Mohammad Yeakub Ali
Date Deposited: 23 Jul 2013 15:39
Last Modified: 23 Jul 2013 15:39
URI: http://irep.iium.edu.my/id/eprint/27112

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