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Focused ion beam machining of silicon

Hung, NguyenPhu and Fu, Yongqi and Ali, Mohammad Yeakub (2002) Focused ion beam machining of silicon. Journal of Materials Processing Technology, 127 (2). pp. 256-260. ISSN 0924-0136

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Abstract

This paper optimizes the parameters of a focused gallium ion beam system for the micromachining of single-crystal silicon. The effect of the parameters on the surface integrity and material removal rate (MRR) were studied. The surface integrity and machined features were measured with a scanning probe microscope. Statistical models were established to predict the sputtered depths and MRRs. The sputtering depth increased with higher accelerating voltage, more ion dose, shorter pixel spacing, and longer dwell time. Similar trends were found for predicting the MRR. A surface roughness in the range of 2-5 nm was achieved, and was found to be linearly dependent on the pixel spacing. © 2002 Elsevier Science B.V. All rights reserved.

Item Type: Article (Journal)
Additional Information: 4751/27110
Uncontrolled Keywords: Focused ion beam; Micromachining; Single crystal silicon
Subjects: T Technology > TS Manufactures
Kulliyyahs/Centres/Divisions/Institutes: Kulliyyah of Engineering > Department of Manufacturing and Materials Engineering
Depositing User: Prof. Ir. Dr. Mohammad Yeakub Ali
Date Deposited: 23 Jul 2013 15:22
Last Modified: 23 Jul 2013 15:22
URI: http://irep.iium.edu.my/id/eprint/27110

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