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Reverse leakage current mechanisms in quantum dot laser structures

Hasbullah, Nurul Fadzlin and David, John P. R. (2011) Reverse leakage current mechanisms in quantum dot laser structures. In: RSM 2011, 28-30 Sep 2011.

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Abstract

Dark current-voltage measurements undertaken on a series of InAs based quantum dot laser structures show significant variations depending on the growth conditions of the GaAs barrier layer. A systematic study of their temperature dependence suggests that the main mechanism determining the reverse leakage is due to generation–recombination via mid-band traps assisted by Frenkel-Poole emission of carriers from these traps. Since the dark current is a relatively parameter to determine in a device, optimising this is a quicker means of optimising the growth parameters than undertaking full laser testing. I. INTRODUCTION

Item Type: Conference or Workshop Item (Full Paper)
Additional Information: 4527/17653 ISBN: 978-161284846-4
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering > TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices
Kulliyyahs/Centres/Divisions/Institutes: Kulliyyah of Engineering
Depositing User: Dr Nurul Fadzlin Hasbullah
Date Deposited: 22 Feb 2012 00:51
Last Modified: 09 Sep 2015 13:45
URI: http://irep.iium.edu.my/id/eprint/17653

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