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Design of a low noise amplifier with GaAs MESFET at Ku-Band

Islam, Md. Rafiqul and Alam, A. H. M. Zahirul and Khan, Sheroz and Shabana, Arafat A. A (2010) Design of a low noise amplifier with GaAs MESFET at Ku-Band. In: International Conference on Computer and Communication Engineering (ICCCE 2010), 11-13 May 2010, Kuala Lumpur.

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Ku-Band low noise amplifier has been designed with the gain of 8.90 dB and 2.19 dB noise figure for satellite receiver. The parameters are optimized by using Microwave Office Simulator (AWR) Ver. 2006. The size of the monolithic chip is 0.316mm2. The LNA is designed to operate at 12GHz.

Item Type: Conference or Workshop Item (Plenary Papers)
Additional Information: 3802/1632
Uncontrolled Keywords: Low noise amplifier (LNA, Gain, Noise figure,Stability
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Kulliyyahs/Centres/Divisions/Institutes (Can select more than one option. Press CONTROL button): Kulliyyah of Engineering > Department of Electrical and Computer Engineering
Depositing User: Dr AHM Zahirul Alam
Date Deposited: 13 Sep 2011 15:05
Last Modified: 02 Aug 2017 16:38
URI: http://irep.iium.edu.my/id/eprint/1632

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