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Effect of modulation p-doping on the optical properties of quantum dot laser structure

Hasbullah, Nurul Fadzlin and David, J. P. R. and Mowbray, D. J. (2010) Effect of modulation p-doping on the optical properties of quantum dot laser structure. In: 2010 Malaysia National Conference on Physics (PERFIK 2010), 27-30 October, 2010, Lumut, Perak, Malaysia.

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Temperature dependence electroluminescence (EL) measurements have been performed on In(Ga)As/ GaAs quantum dot (QD) structures with varying amounts of modulation p-doping. It is found that the IEL decreases with increasing temperature with the size of reduction decreases with increasing doping level. Activation energies derived from the temperature dependence results shows that the values increases with increasing doping. This is attributed to an increased Coulombic attraction between the extrinsic holes and injected electrons.

Item Type: Conference or Workshop Item (Full Paper)
Additional Information: 4527/1477
Uncontrolled Keywords: Modulation p-doping, optical, quantum dot, laser, electroluminescence.
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering > TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices > TK7885 Computer engineering
Kulliyyahs/Centres/Divisions/Institutes (Can select more than one option. Press CONTROL button): Kulliyyah of Engineering > Department of Electrical and Computer Engineering
Depositing User: Dr Nurul Fadzlin Hasbullah
Date Deposited: 04 Sep 2011 10:41
Last Modified: 28 Feb 2012 11:07
URI: http://irep.iium.edu.my/id/eprint/1477

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