Effect of low-energy proton radiation on the degradation of silicon carbide Schottky diodes

Baba, Tamana and Hasbullah, Nurul Fadzlin and Javed, Yasir and Khan, Zafar Iqbal and Sulaiman, Nurul Nabiilah (2025) Effect of low-energy proton radiation on the degradation of silicon carbide Schottky diodes. Journal of Electronic Materials, 54 (7). pp. 5984-5992. ISSN 0361-5235 E-ISSN 1543-186X

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Abstract

Silicon carbide (SiC) Schottky diodes are gaining traction for their potential in high-voltage, high-temperature, and radiation-resistant applications. While superior to traditional silicon (Si) diodes, their radiation hardness requires further exploration, particularly at lower energies. Although high-energy radiation undoubtedly degrades devices, understanding the impact of lower-energy radiation is crucial for real-world applications. This study employed 8 MeV proton radiation, considered relatively low energy in radiation physics, to investigate the response of SiC Schottky diodes. Interestingly, the irradiated devices displayed a slight decrease in reverse leakage current, indicating improved blocking ability. Encouragingly, both forward current and capacitance remained relatively unaffected, with a minor change in the ideality factor. Microscopy confirmed these findings by revealing no surface-level defects or leakage current hotspots, solidifying the exceptional resilience of SiC Schottky diodes to even lower-energy radiation.

Item Type:	Article (Journal)
Additional Information:	4527/125590
Uncontrolled Keywords:	Silicon carbide (SiC) · Schottky diodes (SDs) · radiation · degradation · proton · defects · ideality factor
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering > TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices T Technology > TK Electrical engineering. Electronics Nuclear engineering > TK9001 Nuclear engineering. Atomic power
Kulliyyahs/Centres/Divisions/Institutes (Can select more than one option. Press CONTROL button):	Kulliyyah of Engineering Kulliyyah of Engineering > Department of Electrical and Computer Engineering
Depositing User:	Dr Nurul Fadzlin Hasbullah
Date Deposited:	22 Dec 2025 16:35
Last Modified:	24 Dec 2025 07:49
Queue Number:	2025-12-Q778
URI:	http://irep.iium.edu.my/id/eprint/125590

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