Improving thermoelectric properties of Bi2Te3 thin films by manganese co-sputtering

Th’ng, Angella and Ahmad Musri, Nurfarhana and Chelvanathan, Puvaneswaran and Su’ait, Mohd Sukor and Md Yatim, Nadhrah and Nor Hairin, Assayidatul Laila and Syafiq, Ubaidah (2026) Improving thermoelectric properties of Bi2Te3 thin films by manganese co-sputtering. Journal of Visualized Experiments, 2026-June (232). pp. 1-17. ISSN 1940-087X

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Abstract

Bi2Te3 remains a benchmark n-type thermoelectric (TE) material for low-temperature energy conversion, but its small band gap can reduce efficiency because of thermally generated parasitic carriers. Elemental doping has been explored to improve TE performance, although systematic studies on manganese (Mn)-doped Bi2Te3 thin films remain limited. In this study, a radiofrequency magnetron co-sputtering workflow was used to fabricate Mn-doped Bi2Te3 thin films by varying Mn target power while maintaining constant Bi2Te3 deposition conditions. Structural, microstructural, compositional, and TE transport properties were evaluated using X-ray diffraction, field-emission scanning electron microscopy, energy-dispersive X-ray spectroscopy, and temperature-dependent transport measurements. X-ray diffraction confirmed retention of the rhombohedral Bi2Te3 phase with a preferred (015) orientation, while peak shifts toward higher 2θ values were consistent with Mn-related lattice contraction. All films exhibited negative Seebeck coefficients, confirming n-type conduction. Increasing Mn doping enhanced the magnitude of the Seebeck coefficient but also increased electrical resistivity, demonstrating a transport tradeoff. The film deposited at 5 W Mn power achieved the highest power factor of 529.33 μW m−1 K−2 at 523 K because of its low resistivity combined with adequate thermopower. These results demonstrate that moderate Mn incorporation can improve the power-factor related performance of Bi2Te3 thin films within the measured temperature range.

Item Type:	Article (Journal)
Uncontrolled Keywords:	Thermoelectric, Bi2Te3 Thin Films, Manganese Co-Sputtering
Subjects:	T Technology > T Technology (General) T Technology > TK Electrical engineering. Electronics Nuclear engineering
Kulliyyahs/Centres/Divisions/Institutes (Can select more than one option. Press CONTROL button):	Kulliyyah of Engineering > Department of Manufacturing and Materials Engineering Kulliyyah of Engineering
Depositing User:	Dr Assayidatul Laila Nor Hairin
Date Deposited:	01 Jul 2026 16:54
Last Modified:	01 Jul 2026 16:54
Queue Number:	2026-06-Q3827
URI:	http://irep.iium.edu.my/id/eprint/129576

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