Dark Current mechanisms in quantum dot laser structures

Hasbullah, Nurul Fadzlin and David, J. P. R. and Mowbray, D. J. (2011) Dark Current mechanisms in quantum dot laser structures. Journal of Applied Physics, 109 (11). pp. 113111-1. ISSN 0021-8979

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Abstract

Current-voltage measurements have been performed on InAs/InGaAs/GaAs quantum dot structures with varying growth and design parameters. These measurements show that the forward and reverse bias dark currents decrease with increasing spacer growth temperature, however, they are relatively insensitive to the number of periods of the quantum dot layers. Temperature dependent current-voltage measurements show that the mechanism that governs the reverse bias leakage current is due to generation-recombination via mid-band traps assisted by the Frenkel-Poole emission of carriers from these traps.

Item Type:	Article (Journal)
Additional Information:	4527/9816
Uncontrolled Keywords:	dark, current, mechanisms
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering > TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices > TK7885 Computer engineering
Kulliyyahs/Centres/Divisions/Institutes (Can select more than one option. Press CONTROL button):	Kulliyyah of Engineering > Department of Electrical and Computer Engineering
Depositing User:	Puan Suriani Razali
Date Deposited:	24 May 2012 22:27
Last Modified:	24 May 2012 22:27
URI:	http://irep.iium.edu.my/id/eprint/9816

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