Optimizing the efficiency of gallium nitride-based lightemitting diodes from contact area of current spreading to electrode

Shaari, Adam and Ahmad Fajri, Faris Azim and Ahmad Noorden, Ahmad Fakhrurrazi and Abdul Kadir@Jaafar, Muhammad Zamzuri and Daud, Suzairi (2020) Optimizing the efficiency of gallium nitride-based lightemitting diodes from contact area of current spreading to electrode. Microwave and Optical Technology Letters. pp. 970-974. ISSN 0895-2477 E-ISSN 1098-2760 (In Press)

Preview	PDF (Evidence from publishers' website) - Published Version Download (319kB) | Preview
	PDF - Accepted Version Restricted to Repository staff only Download (663kB) | Request a copy
Preview	PDF (Scopus) - Supplemental Material Download (243kB) | Preview
Preview	PDF (wos) - Supplemental Material Download (513kB) | Preview

Abstract

A nonuniform current spreading in the current spreader layer greatly reduced the internal quantum efficiency (IQE) of the light-emitting diodes (LED). The effects of the current spreading layer on the electrode contact area toward the IQE in a vertical design of gallium nitride (GaN)-based LED chip is analytically analyzed. The contact area was varied by changing the value of the electrode’s width from 2 to 12 μm. Efficiency droop and current density at peak IQE are analyzed based on contact area. The width of 2 μm requires 1.6 μAm−2 current density to achieve peak efficiency and produces a droop of 0.2150. The width of 12 μm requires 9.6 μAm−2 current density to achieve peak efficiency and produces 0.0557 droop. The increase in contact area increases the current A nonuniform current spreading in the current spreader layer greatly reduced the internal quantum efficiency (IQE) of the light-emitting diodes (LED). The effects of the current spreading layer on the electrode contact area toward the IQE in a vertical design of gallium nitride (GaN)-based LED chip is analytically analyzed. The contact area was varied by changing the value of the electrode’s width from 2 to 12 μm. Efficiency droop and current density at peak IQE are analyzed based on contact area. The width of 2 μm requires 1.6 μAm−2 current density to achieve peak efficiency and produces a droop of 0.2150. The width of 12 μm requires 9.6 μAm−2 current density to achieve peak efficiency and produces 0.0557 droop. The increase in contact area increases the current

Item Type:	Article (Journal)
Additional Information:	7730/84021
Uncontrolled Keywords:	current density, current spreader, efficiency droop, internal quantum efficiency, light-emitting diode
Subjects:	Q Science > QC Physics
Kulliyyahs/Centres/Divisions/Institutes (Can select more than one option. Press CONTROL button):	Kulliyyah of Science Kulliyyah of Science > Department of Physics
Depositing User:	Dr Ahmad Fakhrurrazi Ahmad Noorden
Date Deposited:	28 Oct 2020 07:56
Last Modified:	20 Mar 2021 16:57
URI:	http://irep.iium.edu.my/id/eprint/84021

Actions (login required)

View Item