Radiation damage study of electrical properties in GaN LEDs diode after electron irradiation

Abdullah, Yusof and Hedzir, Anati Syahirah and Hasbullah, Nurul Fadzlin and Muridan, Muridan, Norasmahan and Che Hak, Cik Rohaida and Mahat, Sarimah (2017) Radiation damage study of electrical properties in GaN LEDs diode after electron irradiation. In: International Conference on X-rays and Related Techniques in Research and Industry 2016 (ICXRI2016),, 17th to 18 th August 2016, Putrajaya, Malaysia. (In Press)

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Abstract

Nitride-based light emitting diodes (LEDs) is an attractive material due to its high temperature tolerance and suitable to be used in extreme environment. The irradiation process of Gallium Nitride (GaN) diode was carried out by electron irradiation with 1000 kGy and 1500 kGy doses with a conveyor speed of 50 kGy per pass. Capacitance-voltage (C-V) and current-voltage (IV) characterization for both pre and post irradiation samples was done. Both current and capacitance show decreasing while reverse leakage current increased after irradiation. The reverse leakage current revealed that the current were start leakage at 1.0 x10-7 A and 1.0 x10-9 A for 1000 kGy and 1500 kGy irradiations respectively. The current-voltage graph indicated that the effect of electron irradiation on diode produced weak spots as defect cause leakage current. The traps and bulk defect is believed to contributed to the leakage current increased.

Item Type:	Conference or Workshop Item (Plenary Papers)
Additional Information:	4527/63004
Uncontrolled Keywords:	Capacitance-voltage, Electron irradiation, Leakage current, Light emitting diodes
Subjects:	T Technology > T Technology (General)
Kulliyyahs/Centres/Divisions/Institutes (Can select more than one option. Press CONTROL button):	Kulliyyah of Engineering > Department of Electrical and Computer Engineering
Depositing User:	Faizah Shahbudin
Date Deposited:	23 Mar 2018 15:09
Last Modified:	23 Mar 2018 15:09
URI:	http://irep.iium.edu.my/id/eprint/63004

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