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Enhance TL response due to radiation defects in Ge doped silica preforms

Ahmad Shaharuddin, Siti Shafiqah and Mohd Amin, Yusoff and Md. Nor, Roslan and Tamchek, Nizam and D.A, Bradley (2015) Enhance TL response due to radiation defects in Ge doped silica preforms. Radiation Physics and Chemistry. pp. 87-90. ISSN 0969-806X (In Press)

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Study has been made of the thermoluminescence (TL) response of Ge-doped silica preforms fabricated using the MCVD process and subsequently subjected to γ-ray irradiation. Two types of preform were fabricated, obtained using a different flow rate and deposition temperature for each case. Results from the absorption spectra of the samples show a signature absorption peak at 5.1 eV and 6.8 eV, indicative of oxygen-deficient and oxygen-rich defects respectively. The TL efficiency for both Ge samples were compared with the standard phosphor-based (LiF) thermoluminescence dosimeter, TLD100. For both sample types, a linear response has been obtained over the dose range 1–10 Gy. Analysis further showed the oxygen deficient Ge-doped silica sample provides a very much greater TL yield than TLD100, at 890 nC/Gy compared to 220 nC/Gy. Conversely, the oxygen rich sample gave a more limited response, with a sensitivity of 75 nC/Gy.

Item Type: Article (Journal)
Additional Information: 7747/55550
Subjects: Q Science > QC Physics
Kulliyyahs/Centres/Divisions/Institutes (Can select more than one option. Press CONTROL button): Kulliyyah of Science > Department of Physics
Depositing User: DR Siti Shafiqah Binti Ahmad Shaharuddin
Date Deposited: 13 Feb 2017 18:24
Last Modified: 14 Feb 2017 00:32
URI: http://irep.iium.edu.my/id/eprint/55550

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