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Triangular shaped silicon nanowire FET characterization using COMSOL multiphysics

Yazeer, Mohamed Jameel and Za’bah, Nor Farahidah and Alam, A.H.M. Zahirul (2016) Triangular shaped silicon nanowire FET characterization using COMSOL multiphysics. In: 6th International Conference on Computer and Communication Engineering (ICCCE 2016), 25th-27th July 2016, Kuala Lumpur.

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Abstract

The demands and expectations of high performance devices using Field Effect Transistors (FETs) are increased day by day. In order to obtain transistors with smaller size but with increased speed and performance, device scaling was done. However, making transistor in smaller size is not an easy task. One of the challenges with scaling the size of transistor is the short channel effects (SCEs). In order to reduce short channel effects, non-classical FETs were introduced. On top of that, the next transistor technology that was looked into was the semiconductor nanowire FET. In this work, a triangular shaped silicon nanowire (Si NW) FET with 300 nm channel length was designed using latest finite element analysis tool COMSOL Multiphysics and its SCE parameters were measured. The designed triangular shaped Si NW FET shows better performance in reducing the SCEs when compared with a similar sized cylindrical shaped Si NW FET and commercial MOSFET, (ZVNL120A).

Item Type: Conference or Workshop Item (Plenary Papers)
Additional Information: 5466/54639
Uncontrolled Keywords: triangular shaped FET; cylindrical FET; nanowire FET; short channel effects.
Subjects: T Technology > T Technology (General)
Kulliyyahs/Centres/Divisions/Institutes: Kulliyyah of Information and Communication Technology > Department of Information System
Kulliyyah of Information and Communication Technology > Department of Information System
Depositing User: Dr. Nor Farahidah Za'bah
Date Deposited: 29 Mar 2017 08:52
Last Modified: 29 Mar 2017 08:52
URI: http://irep.iium.edu.my/id/eprint/54639

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