Highly efficient short length Bismuth-based erbium-doped fiber amplifier

Cheng, X.S. and Hamida, Belal Ahmed and Arof , Hamzah and Ahmad, Harith and Harun, Sulaiman Wadi (2011) Highly efficient short length Bismuth-based erbium-doped fiber amplifier. Laser Physics (International Journal), 21 (10). pp. 1793-1796. ISSN ISSN print: 1054-660X, ISSN electronic: 1555-6611

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Abstract

An efficient 21 cm Bismuth-based erbium doped fiber amplifier (Bi-EDFA) operating in both C- and L-band wavelength regions is proposed and demonstrated. The proposed Bi-EDFA uses the gain medium with an erbium ion concentration of 6300 ppm in conjunction with a double-pass configuration. Compared to conventional silica-based erbium-doped fiber amplifiers (Si-EDFAs) with the same amount of Erbium ions, the Bi-EDFA provides a higher attainable gain as well as a greater amplification bandwidth ranging from 1525 to 1620 nm. The proposed Bi-EDFA achieved a flat-gain of around 23 dB with gain variation of ±3.5 dB within the wavelength region from 1530 to 1565 nm at the maximum pump power of 150 mW. The corresponding noise figures are obtained at an average of 6 dB.

Item Type:	Article (Journal)
Additional Information:	7222/41861
Uncontrolled Keywords:	Bismuth based erbium doped fiber; Double pass configuration; Erbium ion; Flat-gain; Gain medium; Gain variations; Maximum pump power; Wavelength regions
Subjects:	T Technology > T Technology (General) > T10.5 Communication of technical information
Kulliyyahs/Centres/Divisions/Institutes (Can select more than one option. Press CONTROL button):	Kulliyyah of Engineering > Department of Electrical and Computer Engineering
Depositing User:	Belal Ahmed Hamida
Date Deposited:	20 Mar 2015 11:32
Last Modified:	20 Mar 2015 11:32
URI:	http://irep.iium.edu.my/id/eprint/41861

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