Simulation of electrical characterization on lateral silicon-on-insulator PIN Diode for space radiation detector

Zainudin, Z. and Ismail, Ahmad Fadzil and Hasbullah, Nurul Fadzlin and Sabri, Sharizal Fadlie (2014) Simulation of electrical characterization on lateral silicon-on-insulator PIN Diode for space radiation detector. In: 5th International Conference on Computer & Communication Engineering (ICCCE 2014), 23-25 Sep 2014, Kuala Lumpur, Malaysia.

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Abstract

This paper discusses on the performance of SOI pin diode radiation detector when compared to conventional bulk silicon pin diode radiation detector. Lateral SOI detector was virtually fabricated in SILVACO ATHENA and its electrical characteristics was analyzed in SILVACO ATLAS. It was found that SOI pin diode produced lower leakage current value with 1x104 A/μm2 difference compared to bulk structure. However, the same SOI structure suffered from temperature variation with an increment of 1x102 A/μm2 in current density after the temperature was varied from 27°C to 80°C.

Item Type:	Conference or Workshop Item (Invited Papers)
Additional Information:	5068/41824 (ISBN: 978-1-4799-7635-5, DOI: 10.1109/ICCCE.2014.82)
Uncontrolled Keywords:	pin diode; radiation detector; lateral; SOI; bulk; temperature
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering > TK5101 Telecommunication. Including telegraphy, radio, radar, television
Kulliyyahs/Centres/Divisions/Institutes (Can select more than one option. Press CONTROL button):	Kulliyyah of Engineering > Department of Electrical and Computer Engineering
Depositing User:	Ir. Dr. Ahmad Fadzil Ismail
Date Deposited:	23 Feb 2015 14:34
Last Modified:	20 Sep 2017 17:26
URI:	http://irep.iium.edu.my/id/eprint/41824

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