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Electrical performances of commercial GaN and GaAs based optoelectronics under neutron irradiation

Ahmad Fauzi, Dhiyauddin and Alang Md Rashid, Nahrul Khair and Abdul Karim, Julia and Mohamed Zin, Mohamed Rawi and Hasbullah, Nurul Fadzlin and Sheik Fareed, O A (2013) Electrical performances of commercial GaN and GaAs based optoelectronics under neutron irradiation. IOP Conference Series: Materials Science and Engineering, 23. 012029(1)-012029(8). ISSN 1757-8981

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Abstract

This paper aims to demonstrate the effects of displacement damage caused by high energetic neutron particle towards the electrical performances of gallium arsenide (GaAs) and gallium nitride (GaN) p-n based diodes. The investigations are carried out through current-voltage (I-V) and capacitance-voltage (C-V) measurements using Keithley 4200 SCS. Two different commercial optoelectronics diodes; GaN on SiC light emitting diode (LED) and GaAs infrared emitting diode (IRED) were radiated with neutron using pneumatic transfer system (PTS) in the PUSPATI TRIGA Mark II research reactor under total neutron flux of 1×1012 neutron/cm2.s. Following the neutron exposure for 1, 3 and 5 minutes, the I-V forward bias and reverse bias leakage current increase for GaAs IREDs, but minimal changes were observed in the GaN LEDs. The C-V measurements revealed that the capacitance and carrier concentration of GaAs IREDs decrease with increasing radiation flux.

Item Type: Article (Journal)
Additional Information: 5928/33632
Uncontrolled Keywords: Electronics and devices Semiconductors Surfaces, interfaces and thin films Optics, quantum optics and lasers Condensed matter: structural, mechanical & thermal
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Kulliyyahs/Centres/Divisions/Institutes: Kulliyyah of Engineering > Department of Electrical and Computer Engineering
Depositing User: Dr. Nahrul Khair Alang Md Rashid
Date Deposited: 30 May 2014 10:42
Last Modified: 30 May 2014 10:42
URI: http://irep.iium.edu.my/id/eprint/33632

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