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Effects on the Forward Bias Characteristics of Neutron Irradiated Si and GaAs Diodes

Che Omar, Nuurul Iffah and Alang Md Rashid, Nahrul Khair and Abdullah, J. and Abdul Karim, J. and Hasbullah, Nurul Fadzlin (2012) Effects on the Forward Bias Characteristics of Neutron Irradiated Si and GaAs Diodes. Research Journal of Applied Sciences, Engineering and Technology, 4 (23). pp. 5079-5083. ISSN 2040-7459 E-ISSN 2040-7467

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The aim of this study is to investigate the effects on forward bias characteristics of neutron radiation on various commercially available silicon and GaAs diodes. The diodes were irradiated using the Pneumatic Transfer System (PTS) facility in Malaysian Nuclear Agency with neutron fluences up to 1012 neutron/cm2.s for an exposure time of 1, 3 and 5 min. The Forward Bias (FB) current-voltage (I-V) characteristics and doping profiles of the diodes were recorded before and after irradiation. It is observed that the FB leakage current of the silicon and GaAs diodes increases after irradiation. The increase in leakage current is interpreted as being due to an increase of generation-recombination traps created in the band gap after radiation. The doping concentration of GaAs diodes in FB is observed to decrease while the series resistance increases after irradiation which may be attributed to changes in doping concentration due to carrier removal by the defects produced.

Item Type: Article (Journal)
Additional Information: 5928/28989
Uncontrolled Keywords: Commercial diode ; doping concentration ; electrical characterization ; ideality factor ; leakage current ; neutron radiation
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering > TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices
Kulliyyahs/Centres/Divisions/Institutes (Can select more than one option. Press CONTROL button): Kulliyyah of Engineering > Department of Electrical and Computer Engineering
Depositing User: Dr. Nahrul Khair Alang Md Rashid
Date Deposited: 15 Feb 2013 08:32
Last Modified: 23 Nov 2016 09:04
URI: http://irep.iium.edu.my/id/eprint/28989

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