Theoretical study of atomic level understanding of the reactive ion etching (RIE)

Muhida, Rifki and Rahman, Md. Mamudur and Chowdhury, Md. Sazzad Hossien and Muhida, Riza and Zainuddin, Hishamuddin and Zakaria, Azmi and Kasai, Hideaki (2012) Theoretical study of atomic level understanding of the reactive ion etching (RIE). Journal of Computational and Theoretical Nanoscience, 9 (8). pp. 1067-1069. ISSN 1546-1955 (P) 1546-1963 (O)

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Abstract

We consider cluster model of FeNi4 cluster (as material target) where Fe ion is surrounded by four Ni ions in order to understand the mechanisms involved in the reactive ion etching (RIE) processes on magnetic surfaces(e.g., FeNi surface). By considering CO ions as reactive gases, we etch Fe ion from the cluster surface providing ion pentacarbonyl, i.e., Fe(CO)5. By density functional theory based first principle calculations, we calculate the potential energy surface(PES) of the system and describe the mechanism of the reaction. Based on the two chosen pathways for initial and final states, we show that the RIE processes follow the pathway that gives us minimum energy.

Item Type:	Article (Journal)
Additional Information:	5807/9488
Uncontrolled Keywords:	First principle calculations; Density functional theory, Reactive Ions Etching; Magnetic surface; Molecular orbital
Subjects:	Q Science > QC Physics
Kulliyyahs/Centres/Divisions/Institutes (Can select more than one option. Press CONTROL button):	Kulliyyah of Engineering > Department of Science
Depositing User:	Dr. Md Sazzad Hossien Chowdhury
Date Deposited:	13 Jan 2013 20:52
Last Modified:	13 Feb 2013 21:09
URI:	http://irep.iium.edu.my/id/eprint/28502

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• Theoretical study of atomic level understanding of the reactive ion etching (RIE). (deposited 16 Dec 2011 10:10)
  • Theoretical study of atomic level understanding of the reactive ion etching (RIE). (deposited 13 Jan 2013 20:52) [Currently Displayed]

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