Advancing high-volume GaN manufacturing: precision simulation of electrical and geometrical deviations through current spreading

Ahmad Fajri, Faris Azim and Kopp, Fabian and Ahmad Noorden, Ahmad Fakhrurrazi and Iglesias, Alvaro Gomez (2024) Advancing high-volume GaN manufacturing: precision simulation of electrical and geometrical deviations through current spreading. Engineering Research Express, 6 (4). E-ISSN 2631-8695

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Abstract

Manufacturing process deviations pose significant challenges in GaN manufacturing especially when modern technologies demand extreme chip densities. More than a thousand of each of three distinct GaN-based flip-chips were manufactured where the standard deviations of the measured voltages ranged from 13 to 23 mV. By integrating Monte Carlo and finite element methods in the simulations which relies on the theoretical models, the results were validated by comparing the voltage measurements of the three thousand manufactured chips. Validation was even successful considering the voltage deviations of the three distinct designs equivalently, i.e., affected each wafer’s geometrical and electrical properties. In addition, comparing the three designs, Chip A emerged as the optimal choice for low current resistivity. Looking ahead, our theoretical modeling andsimulation hold promise for high-accuracy predictions in high-volume GaN-based chip manufacturing, enhancing reliability and performance.

Item Type:	Article (Journal)
Uncontrolled Keywords:	high-volume manufacturing, computer aided engineering, current spreading simulation, manufacturing testing, Monte Carlo methods, finite element methods
Subjects:	Q Science > QC Physics
Kulliyyahs/Centres/Divisions/Institutes (Can select more than one option. Press CONTROL button):	Kulliyyah of Science > Department of Physics Kulliyyah of Science
Depositing User:	Dr Ahmad Fakhrurrazi Ahmad Noorden
Date Deposited:	27 Dec 2024 10:11
Last Modified:	27 Dec 2024 10:11
URI:	http://irep.iium.edu.my/id/eprint/117266

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