Dopant concentrations analysis on electro-optic performances of gallium nitride-based ultraviolet light-emitting diode chip

Nazmi, Ahmad Nadzimuddin and Hairol Aman, Mohammad Amirul and Ahmad Fajri, Faris Azim and Ahmad Noorden, Ahmad Fakhrurrazi and Isa, Hafizah Noor and Suzairi, Daud (2023) Dopant concentrations analysis on electro-optic performances of gallium nitride-based ultraviolet light-emitting diode chip. Optical Engineering, 62 (7). ISSN 00913286

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Abstract

A high dopant concentration significantly reduces the peak current of the internal quantum efficiency (IQE) of the light-emitting diode (LED). The effect of the dopant concentration on the epitaxial layer toward the IQE, current density, and IQE droop of gallium nitride (GaN)-based LED chip is analyzed with the doping variation from 1 × 1015 cm−3 to 1 × 1021 cm−3. The required current density for the dopant concentrations of 1 × 1015 cm−3 is 122.42 A∕cm−2 with the IQE droop of 10%. Meanwhile, for the dopant concentrations of 1 × 1021 cm−3, the required current density for achieving peak IQE is 0.67 A∕cm−2 with an IQE droop of 51%. The increase in dopant concentrations reduces the current density necessary for achieving peak IQE while increasing IQE droop. The optimization is performed for the device performances based on the peak current and IQE droop. The optimal dopant concentration for this GaN-based LED lies between 1 × 1017 cm−3 and 1 × 1018 cm−3, which is 4.47 × 1017 cm−3, with a peak IQE of 69.1%. The proposed epitaxy structure provides the optimal doping concentration for the homojunction LED chip with a compatible activation current. The results achieved in this work may benefit the entire optoelectronics field.

Item Type:	Article (Journal)
Uncontrolled Keywords:	Internal quantum efficiency; gallium nitride; dopant concentration; radiative recombination; light emitting diode
Subjects:	Q Science > QC Physics
Kulliyyahs/Centres/Divisions/Institutes (Can select more than one option. Press CONTROL button):	Kulliyyah of Science Kulliyyah of Science > Department of Physics
Depositing User:	Dr Ahmad Fakhrurrazi Ahmad Noorden
Date Deposited:	22 Aug 2024 10:10
Last Modified:	22 Aug 2024 10:10
URI:	http://irep.iium.edu.my/id/eprint/105823

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