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Study of the electrical properties of radiation hard devices based on III-V materials

Hasbullah, Nurul Fadzlin (2012) Study of the electrical properties of radiation hard devices based on III-V materials. Research Report. s.n, Kuala Lumpur. (Unpublished)

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In this fast developing era of technological advancement, semiconductor devices hold vital key due to its vast usefulness in every integrated circuit. Most electronic devices nowadays are fabricated using semiconductor materials. GaAs is preferred over silicon to produce devices due to it being more resistant to defects due to radiation. However, literature has proven that defects due to radiation are dependent on the type of radiation and material of the device. Exposure to neutrons can produce measurable changes in the electrical properties and degradations of various semiconductors such as displacement damage effect and indirect ionization. This research studies the effects of neutron radiation by analyzing its current-voltage (I-V) characteristic and comparing it to the commercial silicon or GaAs diodes. The results of neutron radiation using the pneumatic transfer system show leakage current increment in all diodes after bombardment. The increase in leakage current is interpreted as being due to an increase of generation-recombination traps created in the band gap after radiation which indicates device degradation. However, the GaAs infrared emitting diode showed a higher leakage current increment compared to the silicon switching diodes. This may be due to gold doping in silicon which may reduce the effects of neutron irradiation by restricting the formation of other energy levels in the bandgap (McPherson et al. 1997)

Item Type: Monograph (Research Report)
Additional Information: 4527/35458
Uncontrolled Keywords: Commercial diode, doping concentration, electrical characterization, ideality factor, leakage current, neutron radiation
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
T Technology > TK Electrical engineering. Electronics Nuclear engineering > TK7800 Electronics. Computer engineering. Computer hardware. Photoelectronic devices > TK7885 Computer engineering
Kulliyyahs/Centres/Divisions/Institutes (Can select more than one option. Press CONTROL button): Kulliyyah of Engineering > Department of Electrical and Computer Engineering
Depositing User: Sr. Norsyaziela Zulkefli
Date Deposited: 18 May 2015 10:05
Last Modified: 18 May 2015 10:05
URI: http://irep.iium.edu.my/id/eprint/35458

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